The FDS4435BZ is a 20 mOhm and 30 V P-channel powertrench MOSFET. It is available in surface mount SOIC-8 package.

FDS4435BZ This P-Channel MOSFET is produced using semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

FDS4435BZ Features:
•Max rDS(on) = 20mΩ at VGS = –10V, ID = –8.8A
•Max rDS(on) = 35mΩ at VGS = –4.5V, ID = –6.7A
•Extended VGSS range (–25V) for battery applications
•HBM ESD protection level of ±3.8KV typical
•High performance trench technology for extremely low rDS(on)
•High power and current handling capability
•Termination is Lead–free and RoHS compliant

FDS4435BZ属性:
Fet Type: P-Ch
Drain-to-Source Voltage: [Vdss] 30V
Drain-Source On Resistance-Max: 20mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 28nC